SI2314EDS trenchfet power mosfet esd protected: 3000 v
li-lon battery protection v ds (v) r ds(on) ( ) i d (a) 0.033 @ v gs = 4.5 v 4.9 20 0.040 @ v gs = 2.5 v 4.4 0.051 @ v gs = 1.8 v 3.9 g s d top view 2 3 to-236 (sot-23) 1 SI2314EDS (c4)* *marking code d s g 3 k
parameter symbol 5 sec steady state unit drain-source voltage v ds 20 gate-source voltage v gs 12 v t a = 25 c 4.9 3.77 continuous drain current (t j = 150 c) a t a = 70 c i d 3.9 3.0 pulsed drain current b i dm 15 a avalanche current b i as 15 single avalanche energy l = 0.1 mh e as 11.25 mj continuous source current (diode conduction) a i s 1.0 a t a = 25 c 1.25 0.75 power dissipation a t a = 70 c p d 0.80 0.48 w operating junction and storage temperature range t j , t stg ?55 to 150 c
parameter symbol typical maximum unit t 5 sec 75 100 maximum junction-to-ambient a steady state r thja 120 166 c/w maximum junction-to-foot steady state r thjf 40 50 c/w notes a. surface mounted on 1? x 1? fr4 board. b. pulse width limited by maximum junction temperature product specification 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
limits parameter symbol test conditions min typ max unit static drain-source breakdown voltage v( br)dss v gs = 0 v, i d = 250 a 20 gate-threshold voltage v gs(th) v ds = v gs , i d = 250 a 0.45 v gate-body leakage i gss v ds = 0 v, v gs = 4.5 v 1.5 v ds = 16 v, v gs = 0 v 1 a zero gate voltage drain current i dss v ds = 16 v, v gs = 0 v, t j = 70 c 75 on-state drain current a i d(on) v ds 10 v, v gs = 4.5 v 15 a v gs = 4.5 v, i d = 5.0 a 0.027 0.033 drain-source on-resistance a r ds(on) v gs = 2.5 v, i d = 4.5 a 0.033 0.040 ds(on) v gs = 1.8 v, i d = 4.0 a 0.042 0.051 forward transconductance a g fs v ds = 15 v, i d = 5.0 a 40 s diode forward voltage v sd i s = 1.0 a, v gs = 0 v 0.8 1.2 v dynamic b total gate charge q g 11.0 14.0 gate-source charge q gs v ds = 10 v, v gs = 4.5 v, i d = 5.0 a 1.5 nc gate-drain charge q gd ds gs d 2.1 switching turn-on delay time t d(on) 0.53 0.8 rise time t r v = 10 v, r = 10 1.4 2.2 turn-off delay time t d(off) v dd = 10 v, r l = 10 i d 1.0 a, v gen = 4.5 v, r g = 6 13.5 20 s fall-time t f 5.9 9 source-drain reverse recovery time t rr i f = 1.0 a, di/dt = 100 a/ s 13 25 ns notes a. pulse test: pw 300 s duty cycle 2%. b. guaranteed by design, not subject to production testing. SI2314EDS product specification 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
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